IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14
♠ Paglalarawan ng Produkto
| Katangian ng Produkto | Halaga ng Katangian |
| Tagagawa: | Infineon |
| Kategorya ng Produkto: | IGBT Transistors |
| Teknolohiya: | Si |
| Package / Case: | TO-247-3 |
| Estilo ng Pag-mount: | Sa pamamagitan ng Hole |
| Configuration: | Walang asawa |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.35 V |
| Pinakamataas na Gate Emitter Voltage: | 20 V |
| Continuous Collector Current sa 25 C: | 80 A |
| Pd - Pagkawala ng Kapangyarihan: | 274 W |
| Pinakamababang Operating Temperatura: | - 40 C |
| Pinakamataas na Operating Temperatura: | + 175 C |
| Serye: | TRENCHSTOP 5 S5 |
| Packaging: | tubo |
| Brand: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Taas: | 20.7 mm |
| Haba: | 15.87 mm |
| Uri ng Produkto: | IGBT Transistors |
| Dami ng Factory Pack: | 240 |
| Subcategory: | Mga IGBT |
| Tradename: | TRENCHSTOP |
| Lapad: | 5.31 mm |
| Bahagi # Mga alias: | IKW50N65ES5 SP001319682 |
| Timbang ng Yunit: | 0.213537 oz |
HighspeedS5technology na alok
•Highspeedsmoothswitching device para sa hard at softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•Plugandplayreplacement ng mga naunang henerasyong IGBT
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
•Maximumjunctiontemperature175°C
• Kwalipikado ayon sa JEDEC para sa mga target na aplikasyon
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonantconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Mga midtohighrangeswitchingfrequencyconverter
